MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

A member for use in a plasma processing device of the disclosure includes a base material and a film containing yttrium oxide as a main component on the base material. An area occupancy of closed pores of the film is 0.2 area% or less, and a full width at half maximum of a diffraction peak on a (222...

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Bibliographische Detailangaben
Hauptverfasser: ISHIKAWA, Kazuhiro, SAITO, Shuichi, HINO, Takashi
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A member for use in a plasma processing device of the disclosure includes a base material and a film containing yttrium oxide as a main component on the base material. An area occupancy of closed pores of the film is 0.2 area% or less, and a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film is 0.25° or less. A plasma processing device according to the disclosure includes the member for use in a plasma processing device.