SEMICONDUCTOR DEVICE

A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NI Wei, YAMAGAMI, Shigeharu, HAYASHI Tetsuya, MARUI Toshiharu, TAKEMOTO Keisuke, TANAKA Ryouta
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.