LIFT DEPOSITION APPARATUS AND METHOD

A deposition method is provided wherein a donor substrate (10) is arranged opposite a target substrate (20), the donor substrate having a surface (12) facing the target substrate that is provided with a viscous donor material (14). An optical beam (30) is directed via the donor substrate to the dono...

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Bibliographische Detailangaben
1. Verfasser:	ARUTINOV, Gari
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SOLDERING OR UNSOLDERING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A deposition method is provided wherein a donor substrate (10) is arranged opposite a target substrate (20), the donor substrate having a surface (12) facing the target substrate that is provided with a viscous donor material (14). An optical beam (30) is directed via the donor substrate to the donor material so as to release the donor material and to therewith transfer the donor material as a jet towards the target substrate. In the method provided herein an input signal (Ds) is received that specifies a shape to be assumed by the jet with which the donor material is to be transferred and an energy profile of the optical beam is accordingly controlled. Additionally or alternatively the energy profile of the optical beam may be controlled in accordance with a pattern according to which the donor material is to be deposited on the target substrate. Likewise a corresponding deposition apparatus is provided.