JOINING LAYER OF SEMICONDUCTOR MODULE, SEMICONDUCTOR MODULE, AND METHOD FOR MANUFACTURING SAME

Provided is a joining layer (13) of a semiconductor module (10) that is provided between an electronic component (14) and a substrate (15), and consists of a CuSn intermetallic compound. This joining layer (13) is configured such that the composition ratio of Sn increases from a central part (13a) t...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAGUCHI, Tomohiko, IWATA, Koutaro, HIGAMI, Akihiro, MURAOKA, Hiroki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CASTING CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS POWDER METALLURGY SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	Provided is a joining layer (13) of a semiconductor module (10) that is provided between an electronic component (14) and a substrate (15), and consists of a CuSn intermetallic compound. This joining layer (13) is configured such that the composition ratio of Sn increases from a central part (13a) thereof to joining parts (13b and 13c) at ends (14a and 14b) of the electronic component (14). The semiconductor module (10) is produced by placing a paste containing a Cu-core/Sn-shell-powder between the electronic component (14) and the substrate (15) and heating the electronic component (14) and/or the substrate (15) at a temperature of 250°C to 350°C for 1 to 10 minutes under a pressure of 1 MPa to 30 MPa in an inert or reducing atmosphere while the paste is kept to join the electronic component (14) to the substrate (15).