4T PIXEL AND IMAGE SENSOR COMPRISING THE SAME

The present invention relates to a 4T pixel and to an image sensor comprising the same. stop sentence? Such a pixel may for example be used for optical imaging and/or X-ray imaging. The invention particularly relates to 4T pixels and image sensors based on complementary metal-oxide-semiconductor (CM...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Maes, Willem Hendrik
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:The present invention relates to a 4T pixel and to an image sensor comprising the same. stop sentence? Such a pixel may for example be used for optical imaging and/or X-ray imaging. The invention particularly relates to 4T pixels and image sensors based on complementary metal-oxide-semiconductor (CMOS) technologies.According to the invention, the pinning layer is electrically isolated from the substrate, the 4T pixel further comprising a first electrical contact to the pinning layer that is configured for receiving a first voltage during at least part of the transfer time to increase a potential difference between the storage well and the floating diffusion. By applying a negative voltage to the pinning layer during the transfer time in which electrons move from the pinning layer to the diffusion layer, the lag associated with this transfer can be considerably reduced.