IMAGE PICKUP ELEMENT AND ELECTRONIC APPARATUS

The present technology relates to an image pickup device and electronic apparatus that enables suppression of dark current. There are included: a photoelectric conversion unit configured to perform a photoelectric conversion; a trench engraved in a semiconductor substrate; a negative fixed charge fi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	HIRAMATSU Katsunori
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present technology relates to an image pickup device and electronic apparatus that enables suppression of dark current. There are included: a photoelectric conversion unit configured to perform a photoelectric conversion; a trench engraved in a semiconductor substrate; a negative fixed charge film having an oxide film, a nitrogen film, and an oxide film on a side wall of the trench; and an electrode film formed in the fixed charge film. The oxide film configuring the fixed charge film includes silicon monoxide (SiO), and the nitrogen film includes silicon nitride (SiN) . The nitrogen film configuring the fixed charge film can also include a polysilicon film or a high dielectric constant film (high-k film) . The present technology can be applied to, for example, a back-illuminated CMOS image sensor.