CAPACITOR WITH EPITAXIAL STRAIN ENGINEERING

Described is a ferroelectric based capacitor that reduces non-polar monoclinic phase and increases polar orthorhombic phase by epitaxial strain engineering in the oxide thin film and/or electrodes. As such, both memory window and reliability are improved. The capacitor comprises: a first structure c...

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Bibliographische Detailangaben
Hauptverfasser:	SUNG, Seung Hoon, HARATIPOUR, Nazila, LIN, Chia-Ching, KAVALIEROS, Jack, LOH, Owen Y, YOUNG, Ian A, PENUMATCHA, Ashish Verma, CHANG, Sou-Chi, AVCI, Uygar E
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Described is a ferroelectric based capacitor that reduces non-polar monoclinic phase and increases polar orthorhombic phase by epitaxial strain engineering in the oxide thin film and/or electrodes. As such, both memory window and reliability are improved. The capacitor comprises: a first structure comprising metal, wherein the first structure has a first lattice constant; a second structure comprising metal, wherein the second structure has a second lattice constant; and a third structure comprising ferroelectric material (e.g., oxide of Hf or Zr), wherein the third structure is between and adjacent to the first and second structures, wherein the third structure has a third lattice constant, and wherein the first and second lattice constants are smaller than the third lattice constant.