LOW POWER CYCLE TO CYCLE BIT TRANSFER IN GATE DRIVERS

A gate driver includes a high-side region that operates in a first voltage domain, a low-side region that operations in a second voltage domain lower than the first voltage domain, a termination region interposed between the high-side region and the low-side region and configured to isolate the firs...

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Bibliographische Detailangaben
Hauptverfasser: Respigo, Davide, Paganini, Amedeo, Grasso, Massimo, Morini, Sergio
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A gate driver includes a high-side region that operates in a first voltage domain, a low-side region that operations in a second voltage domain lower than the first voltage domain, a termination region interposed between the high-side region and the low-side region and configured to isolate the first voltage domain from the second voltage domain, a high-side gate driver disposed in the high-side region and configured to drive a high-side power transistor, a low-side gate driver disposed in the low-side region and configured to drive a low-side power transistor, and a plurality of termination diodes disposed in the termination region and configured to transmit information bits between the high-side region and the low-side region, where each of the plurality of termination diodes includes an anode coupled to the low-side region and a cathode coupled to the high-side region.