ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE

Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-misci...

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Hauptverfasser: ADAMCZYK, Andrew, J, LEE, Yi-Chia, LIU, Wen, Dar, GE, Jhih, Kuei, KUO, Chi-Hsien
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creator ADAMCZYK, Andrew, J
LEE, Yi-Chia
LIU, Wen, Dar
GE, Jhih, Kuei
KUO, Chi-Hsien
description Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3684887B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3684887B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3684887B13</originalsourceid><addsrcrecordid>eNqNjksKwjAYhLtxIeod_gsUkYp2G5M_NZiH5FHoqhSJK9FCPZIHNRW7cuNqBuabYebZCz09Cl2BMzJ4YTRwY8EJFaQnGk1wsgGLytQfSEhBE0M0m3xeoVVEi6CASGka4NYk-xuvp7LzhJ6ABTsupixwQn2wCIaPPVQjxQL16QjDWlBcZrNrdxvi6quLDPj4O4_9o41D313iPT5bPBe7cluW-8Om-AN5A5GJRmc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>ADAMCZYK, Andrew, J ; LEE, Yi-Chia ; LIU, Wen, Dar ; GE, Jhih, Kuei ; KUO, Chi-Hsien</creator><creatorcontrib>ADAMCZYK, Andrew, J ; LEE, Yi-Chia ; LIU, Wen, Dar ; GE, Jhih, Kuei ; KUO, Chi-Hsien</creatorcontrib><description>Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240925&amp;DB=EPODOC&amp;CC=EP&amp;NR=3684887B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240925&amp;DB=EPODOC&amp;CC=EP&amp;NR=3684887B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ADAMCZYK, Andrew, J</creatorcontrib><creatorcontrib>LEE, Yi-Chia</creatorcontrib><creatorcontrib>LIU, Wen, Dar</creatorcontrib><creatorcontrib>GE, Jhih, Kuei</creatorcontrib><creatorcontrib>KUO, Chi-Hsien</creatorcontrib><title>ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE</title><description>Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjksKwjAYhLtxIeod_gsUkYp2G5M_NZiH5FHoqhSJK9FCPZIHNRW7cuNqBuabYebZCz09Cl2BMzJ4YTRwY8EJFaQnGk1wsgGLytQfSEhBE0M0m3xeoVVEi6CASGka4NYk-xuvp7LzhJ6ABTsupixwQn2wCIaPPVQjxQL16QjDWlBcZrNrdxvi6quLDPj4O4_9o41D313iPT5bPBe7cluW-8Om-AN5A5GJRmc</recordid><startdate>20240925</startdate><enddate>20240925</enddate><creator>ADAMCZYK, Andrew, J</creator><creator>LEE, Yi-Chia</creator><creator>LIU, Wen, Dar</creator><creator>GE, Jhih, Kuei</creator><creator>KUO, Chi-Hsien</creator><scope>EVB</scope></search><sort><creationdate>20240925</creationdate><title>ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE</title><author>ADAMCZYK, Andrew, J ; LEE, Yi-Chia ; LIU, Wen, Dar ; GE, Jhih, Kuei ; KUO, Chi-Hsien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3684887B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ADAMCZYK, Andrew, J</creatorcontrib><creatorcontrib>LEE, Yi-Chia</creatorcontrib><creatorcontrib>LIU, Wen, Dar</creatorcontrib><creatorcontrib>GE, Jhih, Kuei</creatorcontrib><creatorcontrib>KUO, Chi-Hsien</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ADAMCZYK, Andrew, J</au><au>LEE, Yi-Chia</au><au>LIU, Wen, Dar</au><au>GE, Jhih, Kuei</au><au>KUO, Chi-Hsien</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE</title><date>2024-09-25</date><risdate>2024</risdate><abstract>Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.</abstract><oa>free_for_read</oa></addata></record>
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subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
title ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T21%3A28%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ADAMCZYK,%20Andrew,%20J&rft.date=2024-09-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3684887B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true