ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE

ETCHING SOLUTION FOR SIMULTANEOUSLY REMOVING SILICON AND SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE

Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-misci...

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Bibliographische Detailangaben
Hauptverfasser: ADAMCZYK, Andrew, J, LEE, Yi-Chia, LIU, Wen, Dar, GE, Jhih, Kuei, KUO, Chi-Hsien
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Zusammenfassung:Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.