SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A semiconductor laser element (100) includes an n-side semiconductor layer (2), an active layer (3), and a p-side semiconductor layer (4). A least a portion of the p-side semiconductor layer (4) forms a ridge (4a) projecting upward. The p-side semiconductor layer (4) includes an undoped first part (...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: NAKATSU, Yoshitaka
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor laser element (100) includes an n-side semiconductor layer (2), an active layer (3), and a p-side semiconductor layer (4). A least a portion of the p-side semiconductor layer (4) forms a ridge (4a) projecting upward. The p-side semiconductor layer (4) includes an undoped first part (41), an electron barrier layer (42) containing a p-type impurity and having a larger band gap energy than the first part (41), and a second part (43) having at least one p-type semiconductor layer. The lower end of the ridge (4a) is positioned at the first part (41).