OPERATIONAL TEMPERATURE DETERMINATION IN BIPOLAR TRANSISTORS BY RESISTANCE THERMOMETRY

Thermally-sensitive structure and methods for sensing the temperature in a region of a bipolar junction transistor (BJT) during device operation are described. The region may be at or near a region of highest temperature attained in the BJT. Metal resistance thermometry (MRT) can be implemented to a...

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Bibliographische Detailangaben
Hauptverfasser:	MAHON, Simon John, HANSON, Allen W, SCHWITTER, Bryan, BASKARAN, Rajesh, LIAN, Chuanxin, GAO, Frank
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS SEMICONDUCTOR DEVICES TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	Thermally-sensitive structure and methods for sensing the temperature in a region of a bipolar junction transistor (BJT) during device operation are described. The region may be at or near a region of highest temperature attained in the BJT. Metal resistance thermometry (MRT) can be implemented to assess a peak operating temperature of a BJT.