THERMOELECTRIC MATERIAL AND THERMOELECTRIC MODULE

THERMOELECTRIC MATERIAL AND THERMOELECTRIC MODULE

A thermoelectric material 1 includes a parent phase 10 in which an MgSiSn alloy is a main component, a void 12 formed in the parent phase 10, and a silicon layer that is formed on at least a wall surface of the void 12 and that includes silicon as a main component. The thermoelectric material 1 furt...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TSURUMI, Shigeyuki, MATOBA, Akinari, MINAMIKAWA, Toshiharu, YASUDA, Kazumasa, TOYODA, Takeshi, SOTOME, Takeshi, KOYANO, Mikio
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ALLOYS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:A thermoelectric material 1 includes a parent phase 10 in which an MgSiSn alloy is a main component, a void 12 formed in the parent phase 10, and a silicon layer that is formed on at least a wall surface of the void 12 and that includes silicon as a main component. The thermoelectric material 1 further includes MgO in an amount of 1.0 wt.% or more and 20.0 wt.% or less. The silicon layer includes amorphous Si, or amorphous Si and nanosized Si crystals, and the parent phase 10 includes a region in which the composition ratio of the Si of the chemical composition of the MgSiSn alloy is higher than in the other regions and a region in which the composition ratio of the Sn of the chemical composition of the MgSiSn alloy is higher than in the other regions. With these configurations, the thermoelectric material 1 realizes both lower thermal conductivity and lower electrical resistivity.