LINEARITY ENHANCEMENT OF HIGH POWER AMPLIFIERS

LINEARITY ENHANCEMENT OF HIGH POWER AMPLIFIERS

A radio frequency (RF) amplifier circuit includes a field effect transistor (FET) (e.g., a FET belonging to a III-V FET enhancement group), where the FET includes a gate terminal coupled to an RF input node. The circuit further includes a prematch and biasing network coupled between a bias voltage n...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: USCOLA, Ricardo, SRINIDHI EMBAR, Ramanujam, KHALIL, Ibrahim, AHMED, Abdulrhman M.S
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AMPLIFIERS
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
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Beschreibung
Zusammenfassung:A radio frequency (RF) amplifier circuit includes a field effect transistor (FET) (e.g., a FET belonging to a III-V FET enhancement group), where the FET includes a gate terminal coupled to an RF input node. The circuit further includes a prematch and biasing network coupled between a bias voltage node and the RF input node. The prematch and biasing network includes a nonlinear gate current blocking device configured to block a current from flowing between the bias voltage node and the RF input node.