PLASMA CHEMICAL PROCESSING OF WAFER DIES

PLASMA CHEMICAL PROCESSING OF WAFER DIES

A method of processing wafer dies at least partially separated by cut-lines formed in a surface of the wafer, comprises generating a plasma, for example using an RF source, and localising the reaction of the plasma with the wafer surface at vicinities of the cut-lines so as to etch the wafer in the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Beckers, Nicolle Maria Berta Jozefina, Evertsen, Rogier, Wang, Shaoying
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of processing wafer dies at least partially separated by cut-lines formed in a surface of the wafer, comprises generating a plasma, for example using an RF source, and localising the reaction of the plasma with the wafer surface at vicinities of the cut-lines so as to etch the wafer in the vicinities of the cut-lines. Advantageously, the wafer may be laser-cut.