PARTIALLY REMOVING A SEMICONDUCTOR WAFER

A method is disclosed. The method includes: in a semiconductor wafer comprising a first semiconductor layer (10) and a second semiconductor layer (20) adjoining the first semiconductor layer (10), forming a porous region (12) extending from a first surface (11) into the first semiconductor layer (10); and removing the porous region (12) by an etching process, wherein with regard to a doping of the first semiconductor layer (10) and a doping of the second semiconductor layer (20) at least one of the following applies: a doping concentration of the second semiconductor layer (20) is less than 10-2 times a doping concentration of the first semiconductor layer (10); a doping type of the second semiconductor layer is complementary to a doping type of the first semiconductor layer (10).