BIPOLAR TRANSISTOR WITH POLYSILICON EMITTER AND METHOD OF MANUFACTURING

The present invention relates to a bipolar transistor semiconductor device (200) comprising: a substrate layer (not shown); a collector epitaxial layer (201) supported by the substrate layer; a base region (204c) supported by a portion of the collector epitaxial layer; and an emitter region (215) su...

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Bibliographische Detailangaben
Hauptverfasser:	Holland, Steffen, Berglund, Stefan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The present invention relates to a bipolar transistor semiconductor device (200) comprising: a substrate layer (not shown); a collector epitaxial layer (201) supported by the substrate layer; a base region (204c) supported by a portion of the collector epitaxial layer; and an emitter region (215) supported by a portion of the base region, wherein the emitter region comprises a polysilicon material.