POWER MODULE

A power module 1 comprises a base plate 2, a ceramic insulating substrate 4 bonded on the base plate 2, and a semiconductor element 6 bonded on the ceramic insulating substrate 4, wherein a surface 2b of the base plate 2 on a side opposite to the ceramic insulating substrate 4 has a warp 2c with a c...

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Bibliographische Detailangaben
Hauptverfasser: HIROTSURU, Hideki, SAKAI, Atsushi, TANIGUCHI, Yoshitaka, ICHIKAWA, Kohki
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A power module 1 comprises a base plate 2, a ceramic insulating substrate 4 bonded on the base plate 2, and a semiconductor element 6 bonded on the ceramic insulating substrate 4, wherein a surface 2b of the base plate 2 on a side opposite to the ceramic insulating substrate 4 has a warp 2c with a convex shape, and a linear thermal expansion coefficient α1 (× 10-6/K) of the base plate 2 and a linear thermal expansion coefficient α2 (× 10-6/K) of the ceramic insulating substrate 4 when a temperature decreases in the range of 25°C to 150°C satisfy the following Expression (1).α1−α2α1+α2/2×100≤10