SEMICONDUCTOR DEVICE

An active region (1) includes a body region (10) in which first and second transistors are formed, a connection portion (18, 28) to which a potential of the body region is connected, and a lead portion (17, 27) that connects the body region and the connection portion. Source regions or drain regions...

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Bibliographische Detailangaben
Hauptverfasser:	HIRANO, Hiroshige, KURIYAMA, Hiroaki, TATEIWA, Kenji, YAMADA, Takayuki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	An active region (1) includes a body region (10) in which first and second transistors are formed, a connection portion (18, 28) to which a potential of the body region is connected, and a lead portion (17, 27) that connects the body region and the connection portion. Source regions or drain regions of the first and second transistors formed in the body region are provided in a common region. Each of the lead portions extends from a corresponding channel region such that the lead portions are isolated from each other, and a gate electrode (14) extends thereon. A width of the lead portion is narrower than a distance between corresponding ones of contact portions of the source regions and the drain regions of the first and second transistors. A width of the connection portion is equal to or narrower than a gate width of the gate electrode extending on the lead portion.