SEMICONDUCTOR TRANSDUCER DEVICE WITH MULTILAYER DIAPHRAGM AND METHOD OF MANUFACTURING A SEMICONDUCTOR TRANSDUCER DEVICE WITH MULTILAYER DIAPHRAGM
The semiconductor transducer device comprises a diaphragm (10) suspended above a semiconductor body (1). A first layer (9) of the diaphragm (10) comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound and covers a second layer (8) that comprises titanium and/o...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The semiconductor transducer device comprises a diaphragm (10) suspended above a semiconductor body (1). A first layer (9) of the diaphragm (10) comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound and covers a second layer (8) that comprises titanium and/or TiN. Thus the first layer (9) acts as protection layer and prevents production of residues like titanium fluorides during the etching of a sacrificial layer (5) using HF vapor to release the diaphragm (10). |
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