SILICON NITRIDE FILMS WITH HIGH NITROGEN CONTENT

Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and an ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure th...

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Bibliographische Detailangaben
Hauptverfasser:	YIEH, Ellie Y, BASU, Atashi, NEMANI, Srinivas D
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and an ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.