METHOD FOR MANUFACTURING A PRESSURE SENSITIVE TRANSISTOR AND PRESSURE SENSITIVE FIELD EFFECT TRANSISTOR

A method for manufacturing a pressure sensitive transistor 10 comprises the steps of: Forming 110 a channel region 22 between a first contact region 18 and a second contact region 20 in a semiconductor substrate 20, forming 120 a first isolation layer 24 on a main surface 12-A of the semiconductor substrate 12, forming 130 a sacrificial structure 26 on the first isolation layer 24 and above the channel region 22, forming 140 a semiconductor layer 30 on the sacrificial structure and on the first isolation layer 24, wherein the semiconductor layer 30 covers the sacrificial structure 26, removing 150 the sacrificial structure 26 for providing a cavity 34 between the substrate 12 and the semiconductor layer 30 wherein the semiconductor layer 30 forms a membrane structure having a displaceable center region 30-1 and forms a control electrode of the pressure sensitive transistor 10, forming 160 a second isolation layer 40 on the membrane structure 30 and on the exposed portion of the main surface of the semiconductor substrate, and forming 170 contacting structures 44-1, 50-1, 44-2, 50-2, 44-3, 50-3 for the first contact region 18, the second contact region 20 and the membrane structure 30 of the pressure sensitive transistor 10.