METHOD FOR PROCESSING, IN PARTICULAR SEPARATING, A SUBSTRATE BY MEANS OF LASER-INDUCED DEEP REACTIVE ETCHING
A method for machining, in particular for cutting an, in particular, planar substrate by laser-induced deep etching includes: moving laser radiation along a machining line; directing individual pulses onto the planar substrate at a spatial laser pulse distance (d); and subsequently removing an aniso...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A method for machining, in particular for cutting an, in particular, planar substrate by laser-induced deep etching includes: moving laser radiation along a machining line; directing individual pulses onto the planar substrate at a spatial laser pulse distance (d); and subsequently removing an anisotropic material by etching at an etching rate (r) and an etching duration (t). Machining parameters are set according to a condition: 1>d/(R*t)>10−5. |
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