DRY ETCHING GAS COMPOSITION AND DRY ETCHING METHOD

DRY ETCHING GAS COMPOSITION AND DRY ETCHING METHOD

A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1):        CxHyFz(where x, y, and z are integers that satisfy 2 ≤ x ≤ 4, y+z ≤ 2x...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: IKETANI, Yoshihiko, SHIMIZU, Hisashi, SHIBUSAWA, Yukinobu, KATO, Korehito
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1):        CxHyFz(where x, y, and z are integers that satisfy 2 ≤ x ≤ 4, y+z ≤ 2x+2, and 0.5 < z/y < 2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.