ADSORPTIVE TEMPORARY FIXING SHEET AND METHOD FOR MANUFACTURING SAME

Provided is an adsorption temporary fixing sheet having a sufficient shear adhesive strength in a direction parallel to its surface, and having a weak adhesive strength in a direction vertical to the surface. Also provided is a method of producing such adsorption temporary fixing sheet. The adsorpti...

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Bibliographische Detailangaben
Hauptverfasser:	TOKUYAMA, Hideyuki, KATO, Kazumichi, ISEKI, Toru, KANADA, Mitsuhiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING CHEMISTRY COMPOSITIONS BASED THEREON GENERAL PROCESSES OF COMPOUNDING LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL WORKING-UP
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Beschreibung
Zusammenfassung:	Provided is an adsorption temporary fixing sheet having a sufficient shear adhesive strength in a direction parallel to its surface, and having a weak adhesive strength in a direction vertical to the surface. Also provided is a method of producing such adsorption temporary fixing sheet. The adsorption temporary fixing sheet of the present invention includes a foam layer including an open-cell structure, wherein, when a silicon chip vertical adhesive strength of a surface of the foam layer after 20 hours at -40°C is represented by V1 (N/1 cm□), a silicon chip vertical adhesive strength thereof after 20 hours at 23°C is represented by V2 (N/1 cm□), and a silicon chip vertical adhesive strength thereof after 20 hours at 125°C is represented by V3 (N/1 cm□), and a silicon chip shearing adhesive strength of the surface of the foam layer after 20 hours at -40°C is represented by H1 (N/1 cm□) , a silicon chip shearing adhesive strength thereof after 20 hours at 23°C is represented by H2 (N/1 cm□), and a silicon chip shearing adhesive strength thereof after 20 hours at 125°C is represented by H3 (N/1 cm□), relationships of V1