TUNGSTEN TARGET

There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any...

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Bibliographische Detailangaben
Hauptverfasser:	SENDA, Shinichiro, DASAI, Takafumi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction,