NANOWIRE STRUCTURE AND MANUFACTURING METHOD THEREOF

NANOWIRE STRUCTURE AND MANUFACTURING METHOD THEREOF

A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprisingforming a nanowire device (10) comprising the receiving ends (13), the receiving ends be...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DAUDIN, Bruno, DELAUNAY, Marc
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprisingforming a nanowire device (10) comprising the receiving ends (13), the receiving ends being formed so as to form planarsurfaces, and (ii) placing, especially by transfer, a membrane device (3; 34) directly on the nanowires the planar surfaces of the ends for receiving the membrane.