OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: IKEDA, Shintarou, AIURA, Yoshihiro, KIKUCHI, Naoto, SAMIZO, Akane
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a foordite structure and contains Nb and Sn elements, and its holes become charge carriers by the condition that Sn4+/ (Sn2++ Sn4+) which is a ratio of Sn4+to a total amount of Sn in the composite oxide is 0.006 ≤ Sn4+/ (Sn2++ Sn4+) ≤ 0.013.