SCALMGO4 SINGLE CRYSTAL AND DEVICE

An object is to provide a high-quality ScAlMgO4single crystal and a device. The ScAlMgO4single crystal includes Sc, Al, Mg, and O, in which the atomic percentage ratio of Mg to Al, Mg/Al (atom%/atom%), as measured by an inductively coupled plasma emission spectrometric method, is more than 1 and les...

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Bibliographische Detailangaben
Hauptverfasser:	MIYANO, Kentaro, ASAHI, Takehiro, RYOKI, Naoya, UETA, Akio, NOBUOKA, Masaki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	An object is to provide a high-quality ScAlMgO4single crystal and a device. The ScAlMgO4single crystal includes Sc, Al, Mg, and O, in which the atomic percentage ratio of Mg to Al, Mg/Al (atom%/atom%), as measured by an inductively coupled plasma emission spectrometric method, is more than 1 and less than 1.1.