CU-GA ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING CU-GA ALLOY SPUTTERING TARGET

A Cu-Ga alloy sputtering target having a composition including, as a metal component, Ga in a range of 20 at% or more and 45 at% or less, K and Na in a range of 0.1 at% or more and 2 at% or less in total, and a Cu balance including inevitable impurities, in which, complex fluorides containing Na, K,...

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Bibliographische Detailangaben
Hauptverfasser: HASHIMOTO Shu, TAKEDA Takuma, UMEMOTO Keita, MORI Satoru
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A Cu-Ga alloy sputtering target having a composition including, as a metal component, Ga in a range of 20 at% or more and 45 at% or less, K and Na in a range of 0.1 at% or more and 2 at% or less in total, and a Cu balance including inevitable impurities, in which, complex fluorides containing Na, K, and F are dispersed in a matrix of a Cu-Ga alloy, a maximum diameter of an inscribed circle of the complex fluorides is 30 µm or less, and [Na]/([Na]+[K]) is set to be in a range of 0.3 or more and 0.9 or less, [Na] and [K] being atomic ratios of Na and K in the complex fluorides, respectively.