CONDUCTIVE CAP-BASED APPROACHES FOR CONDUCTIVE VIA FABRICATION AND STRUCTURES RESULTING THEREFROM

CONDUCTIVE CAP-BASED APPROACHES FOR CONDUCTIVE VIA FABRICATION AND STRUCTURES RESULTING THEREFROM

Conductive cap-based approaches for conductive via fabrication is described. In an example, an integrated circuit structure includes a plurality of conductive lines in an ILD layer above a substrate. Each of the conductive lines is recessed relative to an uppermost surface of the ILD layer. A plural...

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Bibliographische Detailangaben
Hauptverfasser: TSANG, Chi-Hwa, HAN, Eungnak, CHANDHOK, Manish, WALLACE, Charles H, GSTREIN, Florian, NYHUS, Paul A, BRAIN, Ruth A, HOURANI, Rami
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Conductive cap-based approaches for conductive via fabrication is described. In an example, an integrated circuit structure includes a plurality of conductive lines in an ILD layer above a substrate. Each of the conductive lines is recessed relative to an uppermost surface of the ILD layer. A plurality of conductive caps is on corresponding ones of the plurality of conductive lines, in recess regions above each of the plurality of conductive lines. A hardmask layer is on the plurality of conductive caps and on the uppermost surface of the ILD layer. The hardmask layer includes a first hardmask component on and aligned with the plurality of conductive caps, and a second hardmask component on an aligned with regions of the uppermost surface of the ILD layer. A conductive via is in an opening in the hardmask layer and on a conductive cap of one of the plurality of conductive lines.