COAXIAL CONNECTOR FEED-THROUGH FOR MULTI-LEVEL INTERCONNECTED SEMICONDUCTOR WAFERS

A semiconductor, silicon-on-oxide (SOI) structure having a silicon layer disposed on a bottom oxide (BOX) insulating layer. A deep trench isolation (DTI) material passes vertically through the silicon layer to the bottom oxide insulating layer. The deep trench isolation material has a lower permittivity than the permittivity of the silicon. A coaxial transmission line having an inner electrical conductor and an outer electrically conductive shield structure disposed around the inner electrical conductor passing vertically through the deep trench isolation material to electrically connect electrical conductors disposed over the bottom oxide insulating layer to electrical conductors disposed under the contacts bottom oxide insulating layer.