ALLOY MEMBER, METHOD FOR PRODUCING ALLOY MEMBER, AND PRODUCT WHICH USES ALLOY MEMBER

Provided are: an alloy member that is excellent in homogeneity of both the alloy composition and microstructure and excellent in shape controllability and includes a high entropy alloy having high mechanical properties and high corrosion resistance, a process for producing the same, and a product in...

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Bibliographische Detailangaben
Hauptverfasser:	SHIRATORI, Hiroshi, KUWABARA, Kousuke, ONUMA, Atsuhiko, FUJIEDA, Tadashi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADDITIVE MANUFACTURING TECHNOLOGY ADDITIVE MANUFACTURING, i.e. MANUFACTURING OFTHREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVEAGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING,STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING ALLOYS BLASTING CASTING CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMISTRY FERROUS OR NON-FERROUS ALLOYS HEATING LIGHTING MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER MECHANICAL ENGINEERING METALLURGY NON-POSITIVE DISPLACEMENT PUMPS PERFORMING OPERATIONS POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS POWDER METALLURGY PUMPS FOR LIQUIDS OR ELASTIC FLUIDS TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WEAPONS WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	Provided are: an alloy member that is excellent in homogeneity of both the alloy composition and microstructure and excellent in shape controllability and includes a high entropy alloy having high mechanical properties and high corrosion resistance, a process for producing the same, and a product including the alloy member.In the present invention, the alloy member having a chemical composition comprising elements of Co, Cr, Fe, Ni, and Ti each in an amount within a range of 5 atomic% or more and 35 atomic% or less and Mo in an amount within a range of more than 0 atomic% and 8 atomic% or less, the reminder consisting of unavoidable impurities, wherein ultrafine grains having an average grain diameter of 100 nm or less are dispersed and precipitated in a parent phase crystal.