SEMICONDUCTOR DEVICE INCLUDING THROUGH SILICON VIAS DISTRIBUTING CURRENT

SEMICONDUCTOR DEVICE INCLUDING THROUGH SILICON VIAS DISTRIBUTING CURRENT

A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a po...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WOO, SeungHan, KIM, Yong-Ki, MOON, Jong-Ho, YOUN, Jaeyoun, OH, Chisung, SOHN, Kyomin, RHO, Soojung
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.