VERTICAL LIGHT-EMITTING DEVICES COMPRISING A METAL SUPPORT FILM

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A conductive structure is attached to the semiconductor layers. The insulating substrate is then removed, beneficially by laser lift off. Individual devices are then diced.