POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL
Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | JIN, Guangnan KITADA, Tsuyoshi IKEDA, Takeshi LI, Ping SONG, Wei XU, Fangrong UMEHARA, Masaaki |
description | Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3508514B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3508514B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3508514B13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDqL-w31ABUstuJ7JlQaSXLhG0KkEiZNoof4_gri5OL3lLVWO7C6DdXzGQBV4TCQWHXQsMJC3moM56cRSAQYDUSiiYLIcwFPq2fzOTxzYoYAm59Zqccv3uWy-rhR0lHS_LdNzLPOUr-VRXiPFpt0d2np_rJs_yhtspjNt</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><source>esp@cenet</source><creator>JIN, Guangnan ; KITADA, Tsuyoshi ; IKEDA, Takeshi ; LI, Ping ; SONG, Wei ; XU, Fangrong ; UMEHARA, Masaaki</creator><creatorcontrib>JIN, Guangnan ; KITADA, Tsuyoshi ; IKEDA, Takeshi ; LI, Ping ; SONG, Wei ; XU, Fangrong ; UMEHARA, Masaaki</creatorcontrib><description>Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMICAL PAINT OR INK REMOVERS ; CHEMISTRY ; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; CORRECTING FLUIDS ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FILLING PASTES ; INKS ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; ORGANIC MACROMOLECULAR COMPOUNDS ; PAINTS ; PASTES OR SOLIDS FOR COLOURING OR PRINTING ; POLISHES ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; USE OF MATERIALS THEREFOR ; WOODSTAINS</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201209&DB=EPODOC&CC=EP&NR=3508514B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201209&DB=EPODOC&CC=EP&NR=3508514B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIN, Guangnan</creatorcontrib><creatorcontrib>KITADA, Tsuyoshi</creatorcontrib><creatorcontrib>IKEDA, Takeshi</creatorcontrib><creatorcontrib>LI, Ping</creatorcontrib><creatorcontrib>SONG, Wei</creatorcontrib><creatorcontrib>XU, Fangrong</creatorcontrib><creatorcontrib>UMEHARA, Masaaki</creatorcontrib><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><description>Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL PAINT OR INK REMOVERS</subject><subject>CHEMISTRY</subject><subject>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>CORRECTING FLUIDS</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FILLING PASTES</subject><subject>INKS</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>PAINTS</subject><subject>PASTES OR SOLIDS FOR COLOURING OR PRINTING</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>USE OF MATERIALS THEREFOR</subject><subject>WOODSTAINS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w31ABUstuJ7JlQaSXLhG0KkEiZNoof4_gri5OL3lLVWO7C6DdXzGQBV4TCQWHXQsMJC3moM56cRSAQYDUSiiYLIcwFPq2fzOTxzYoYAm59Zqccv3uWy-rhR0lHS_LdNzLPOUr-VRXiPFpt0d2np_rJs_yhtspjNt</recordid><startdate>20201209</startdate><enddate>20201209</enddate><creator>JIN, Guangnan</creator><creator>KITADA, Tsuyoshi</creator><creator>IKEDA, Takeshi</creator><creator>LI, Ping</creator><creator>SONG, Wei</creator><creator>XU, Fangrong</creator><creator>UMEHARA, Masaaki</creator><scope>EVB</scope></search><sort><creationdate>20201209</creationdate><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><author>JIN, Guangnan ; KITADA, Tsuyoshi ; IKEDA, Takeshi ; LI, Ping ; SONG, Wei ; XU, Fangrong ; UMEHARA, Masaaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3508514B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL PAINT OR INK REMOVERS</topic><topic>CHEMISTRY</topic><topic>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>CORRECTING FLUIDS</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FILLING PASTES</topic><topic>INKS</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>PAINTS</topic><topic>PASTES OR SOLIDS FOR COLOURING OR PRINTING</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>USE OF MATERIALS THEREFOR</topic><topic>WOODSTAINS</topic><toplevel>online_resources</toplevel><creatorcontrib>JIN, Guangnan</creatorcontrib><creatorcontrib>KITADA, Tsuyoshi</creatorcontrib><creatorcontrib>IKEDA, Takeshi</creatorcontrib><creatorcontrib>LI, Ping</creatorcontrib><creatorcontrib>SONG, Wei</creatorcontrib><creatorcontrib>XU, Fangrong</creatorcontrib><creatorcontrib>UMEHARA, Masaaki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIN, Guangnan</au><au>KITADA, Tsuyoshi</au><au>IKEDA, Takeshi</au><au>LI, Ping</au><au>SONG, Wei</au><au>XU, Fangrong</au><au>UMEHARA, Masaaki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><date>2020-12-09</date><risdate>2020</risdate><abstract>Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP3508514B1 |
source | esp@cenet |
subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS |
title | POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T07%3A18%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JIN,%20Guangnan&rft.date=2020-12-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3508514B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |