POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL

Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JIN, Guangnan, KITADA, Tsuyoshi, IKEDA, Takeshi, LI, Ping, SONG, Wei, XU, Fangrong, UMEHARA, Masaaki
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator JIN, Guangnan
KITADA, Tsuyoshi
IKEDA, Takeshi
LI, Ping
SONG, Wei
XU, Fangrong
UMEHARA, Masaaki
description Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3508514B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3508514B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3508514B13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDqL-w31ABUstuJ7JlQaSXLhG0KkEiZNoof4_gri5OL3lLVWO7C6DdXzGQBV4TCQWHXQsMJC3moM56cRSAQYDUSiiYLIcwFPq2fzOTxzYoYAm59Zqccv3uWy-rhR0lHS_LdNzLPOUr-VRXiPFpt0d2np_rJs_yhtspjNt</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><source>esp@cenet</source><creator>JIN, Guangnan ; KITADA, Tsuyoshi ; IKEDA, Takeshi ; LI, Ping ; SONG, Wei ; XU, Fangrong ; UMEHARA, Masaaki</creator><creatorcontrib>JIN, Guangnan ; KITADA, Tsuyoshi ; IKEDA, Takeshi ; LI, Ping ; SONG, Wei ; XU, Fangrong ; UMEHARA, Masaaki</creatorcontrib><description>Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMICAL PAINT OR INK REMOVERS ; CHEMISTRY ; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; CORRECTING FLUIDS ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FILLING PASTES ; INKS ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; ORGANIC MACROMOLECULAR COMPOUNDS ; PAINTS ; PASTES OR SOLIDS FOR COLOURING OR PRINTING ; POLISHES ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; USE OF MATERIALS THEREFOR ; WOODSTAINS</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201209&amp;DB=EPODOC&amp;CC=EP&amp;NR=3508514B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201209&amp;DB=EPODOC&amp;CC=EP&amp;NR=3508514B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIN, Guangnan</creatorcontrib><creatorcontrib>KITADA, Tsuyoshi</creatorcontrib><creatorcontrib>IKEDA, Takeshi</creatorcontrib><creatorcontrib>LI, Ping</creatorcontrib><creatorcontrib>SONG, Wei</creatorcontrib><creatorcontrib>XU, Fangrong</creatorcontrib><creatorcontrib>UMEHARA, Masaaki</creatorcontrib><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><description>Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL PAINT OR INK REMOVERS</subject><subject>CHEMISTRY</subject><subject>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>CORRECTING FLUIDS</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FILLING PASTES</subject><subject>INKS</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>PAINTS</subject><subject>PASTES OR SOLIDS FOR COLOURING OR PRINTING</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>USE OF MATERIALS THEREFOR</subject><subject>WOODSTAINS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w31ABUstuJ7JlQaSXLhG0KkEiZNoof4_gri5OL3lLVWO7C6DdXzGQBV4TCQWHXQsMJC3moM56cRSAQYDUSiiYLIcwFPq2fzOTxzYoYAm59Zqccv3uWy-rhR0lHS_LdNzLPOUr-VRXiPFpt0d2np_rJs_yhtspjNt</recordid><startdate>20201209</startdate><enddate>20201209</enddate><creator>JIN, Guangnan</creator><creator>KITADA, Tsuyoshi</creator><creator>IKEDA, Takeshi</creator><creator>LI, Ping</creator><creator>SONG, Wei</creator><creator>XU, Fangrong</creator><creator>UMEHARA, Masaaki</creator><scope>EVB</scope></search><sort><creationdate>20201209</creationdate><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><author>JIN, Guangnan ; KITADA, Tsuyoshi ; IKEDA, Takeshi ; LI, Ping ; SONG, Wei ; XU, Fangrong ; UMEHARA, Masaaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3508514B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL PAINT OR INK REMOVERS</topic><topic>CHEMISTRY</topic><topic>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>CORRECTING FLUIDS</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FILLING PASTES</topic><topic>INKS</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>PAINTS</topic><topic>PASTES OR SOLIDS FOR COLOURING OR PRINTING</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>USE OF MATERIALS THEREFOR</topic><topic>WOODSTAINS</topic><toplevel>online_resources</toplevel><creatorcontrib>JIN, Guangnan</creatorcontrib><creatorcontrib>KITADA, Tsuyoshi</creatorcontrib><creatorcontrib>IKEDA, Takeshi</creatorcontrib><creatorcontrib>LI, Ping</creatorcontrib><creatorcontrib>SONG, Wei</creatorcontrib><creatorcontrib>XU, Fangrong</creatorcontrib><creatorcontrib>UMEHARA, Masaaki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIN, Guangnan</au><au>KITADA, Tsuyoshi</au><au>IKEDA, Takeshi</au><au>LI, Ping</au><au>SONG, Wei</au><au>XU, Fangrong</au><au>UMEHARA, Masaaki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL</title><date>2020-12-09</date><risdate>2020</risdate><abstract>Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3508514B1
source esp@cenet
subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMICAL PAINT OR INK REMOVERS
CHEMISTRY
COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
CORRECTING FLUIDS
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FILLING PASTES
INKS
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
ORGANIC MACROMOLECULAR COMPOUNDS
PAINTS
PASTES OR SOLIDS FOR COLOURING OR PRINTING
POLISHES
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
USE OF MATERIALS THEREFOR
WOODSTAINS
title POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T07%3A18%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JIN,%20Guangnan&rft.date=2020-12-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3508514B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true