POLYSILOXANE, MATERIAL FOR SEMICONDUCTOR, AND PREPARATION METHOD FOR SEMICONDUCTOR AND SOLAR CELL

Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having...

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Hauptverfasser: JIN, Guangnan, KITADA, Tsuyoshi, IKEDA, Takeshi, LI, Ping, SONG, Wei, XU, Fangrong, UMEHARA, Masaaki
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below,wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.