SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

An embodiment of a semiconductor device includes a semiconductor substrate (110) that includes a channel (107), a first dielectric layer (124) disposed over the semiconductor substrate, and a regrown contact (140) formed through a first opening (143) in the first dielectric layer. The regrown contac...

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Bibliographische Detailangaben
Hauptverfasser: HUANG, Jenn Hwa, YUE, Yuanzheng
Format: Patent
Sprache:eng ; fre ; ger
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