SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

An embodiment of a semiconductor device includes a semiconductor substrate (110) that includes a channel (107), a first dielectric layer (124) disposed over the semiconductor substrate, and a regrown contact (140) formed through a first opening (143) in the first dielectric layer. The regrown contact includes a regrown region (142) formed over the semiconductor substrate, an overhang region (146) coupled to the regrown region and formed over the first dielectric layer, adjacent the first opening, and a conductive cap (148) formed over the regrown region and the overhang region. A method for fabricating the semiconductor device includes forming the first dielectric layer over the semiconductor substrate, forming the first opening in the first dielectric layer, forming a regrown semiconductor layer within the first opening and over the first dielectric layer, forming a conductive cap over the regrown semiconductor layer, and etching the regrown semiconductor layer outside the conductive cap.