SEMICONDUCTOR ELEMENT WITH HIGHLY DOSED QUANTUM STRUCTURE EMITTER

SEMICONDUCTOR ELEMENT WITH HIGHLY DOSED QUANTUM STRUCTURE EMITTER

A semiconductor device having a highly doped quantum structure emitter is disclosed. In an embodiment, the semiconductor device includes a quantum structure emitter. The quantum structure emitter includes of a first layer made of an undoped semiconductor material with a large band gap, a second, mid...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Stowasser, Rainer, Schüppen, Andreas Paul
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device having a highly doped quantum structure emitter is disclosed. In an embodiment, the semiconductor device includes a quantum structure emitter. The quantum structure emitter includes of a first layer made of an undoped semiconductor material with a large band gap, a second, middle, highly doped layer made of a semiconductor material with a low band gap and a third, undoped layer made of a semiconductor material with a large band gap.