INTERPOSER DEVICE INCLUDING AT LEAST ONE TRANSISTOR AND AT LEAST ONE THROUGH-SUBSTRATE VIA

INTERPOSER DEVICE INCLUDING AT LEAST ONE TRANSISTOR AND AT LEAST ONE THROUGH-SUBSTRATE VIA

In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary meta...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: VELEZ, Mario Francisco, ZUO, Chengjie, YUN, Changhan Hobie, BERDY, David Francis, KIM, Jonghae, MUDAKATTE, Niranjan Sunil, GU, Shiqun
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.