FABRICATION METHOD FOR DIGITAL ETCHING OF NANOMETER-SCALE LEVEL STRUCTURES

FABRICATION METHOD FOR DIGITAL ETCHING OF NANOMETER-SCALE LEVEL STRUCTURES

A device includes a surface profile optical element, including a substrate and a plurality of bi-layer stacks on the substrate. Each bi-layer stack of the plurality of bi-layer stacks includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch-stop layer and a bul...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PHLIPS, Bernard, F, YETZBACHER, Michael, K, CHRISTOPHERSEN, Marc
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Beschreibung
Zusammenfassung:A device includes a surface profile optical element, including a substrate and a plurality of bi-layer stacks on the substrate. Each bi-layer stack of the plurality of bi-layer stacks includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch-stop layer and a bulk layer. The etch stop layer includes an etch stop layer index of refraction. The bulk layer includes a bulk layer index of refraction. A ratio of the etch stop layer index of retraction and the bulk layer index of refraction is between 0.75 and 1.25.