REFLECTIVE OPTICAL ELEMENT FOR EUV LITHOGRAPHY

In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm t...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	EHM, Dirk Heinrich, AMENT, Irene, SCHMIDT, Stefan-Wolfgang, WINTER, Ralf, EVA, Eric, BECKER, Moritz, SHKLOVER, Vitaliy, URICH, Diana, KIEREY, Holger, WIESNER, Stefan, MEIER, Robert, JALICS, Christof
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.