MASK FOR EXTREME-UV LITHOGRAPHY AND METHOD FOR MANUFACTURING THE SAME

A mask for extreme-UV lithography, of attenuated phase shift mask type, comprises a substrate (1), a reflecting structure (2) and attenuating and phase-shifting portions (3). An additional capping layer (4) covers at least sidewalls (SW) of the portions (3). It allows reducing a reflection of an inc...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, Jae Uk, KIM, Ryan Ryoung han
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A mask for extreme-UV lithography, of attenuated phase shift mask type, comprises a substrate (1), a reflecting structure (2) and attenuating and phase-shifting portions (3). An additional capping layer (4) covers at least sidewalls (SW) of the portions (3). It allows reducing a reflection of an incident beam of extreme-UV on the sidewalls of the portions, so that reflection peaks on opposite sides of each attenuating and phase-shifting portion are substantially identical. An additional protection function for the mask during cleaning processes is also provided by the capping layer.