LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS
A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950°C or below 1100°C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-3...
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| creator | Brown, Orville W Marley, Peter Sridharan, Srinivasan Widlewski, David L Maloney, John J Megherhi, Mohammed H Gleason, Cody J Davis, Jackie D Wang, Stanley Coffey, Thomas Joseph Tormey, Ellen S Her, Yie-Shein Sakoske, George E |
| description | A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950°C or below 1100°C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt% or 10-99 wt% silica powder and 5-90 wt% or 1-90 wt% glass component. The glass component includes 50-90 mole% SiO 2 , 5-35 mole% or 0.1-35 mole% B 2 O 3 , 0.1-10 mole% or 0.1-25 mole% Al 2 O 3 , 0.1-10 mole% K 2 O, 0.1-10 mole% Na 2 O, 0.1-20 mole% Li 2 O, 0.1-30 mole% F. The total amount of Li 2 O + Na 2 O + K 2 O is 0.1-30 mole% of the glass component. The silica powder can be amorphous or crystalline. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3480179A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3480179A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3480179A13</originalsourceid><addsrcrecordid>eNrjZLD18Q9X8FZw8XT1cXUOCfJ0VnD29w3wD_YM8fT3C1Zw8w9S8PB091BwC3INDHX1c45UcAwI8PF0dgTL8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAYxMLA0NzS0dDYyKUAADtaSmo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS</title><source>esp@cenet</source><creator>Brown, Orville W ; Marley, Peter ; Sridharan, Srinivasan ; Widlewski, David L ; Maloney, John J ; Megherhi, Mohammed H ; Gleason, Cody J ; Davis, Jackie D ; Wang, Stanley ; Coffey, Thomas Joseph ; Tormey, Ellen S ; Her, Yie-Shein ; Sakoske, George E</creator><creatorcontrib>Brown, Orville W ; Marley, Peter ; Sridharan, Srinivasan ; Widlewski, David L ; Maloney, John J ; Megherhi, Mohammed H ; Gleason, Cody J ; Davis, Jackie D ; Wang, Stanley ; Coffey, Thomas Joseph ; Tormey, Ellen S ; Her, Yie-Shein ; Sakoske, George E</creatorcontrib><description>A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950°C or below 1100°C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt% or 10-99 wt% silica powder and 5-90 wt% or 1-90 wt% glass component. The glass component includes 50-90 mole% SiO 2 , 5-35 mole% or 0.1-35 mole% B 2 O 3 , 0.1-10 mole% or 0.1-25 mole% Al 2 O 3 , 0.1-10 mole% K 2 O, 0.1-10 mole% Na 2 O, 0.1-20 mole% Li 2 O, 0.1-30 mole% F. The total amount of Li 2 O + Na 2 O + K 2 O is 0.1-30 mole% of the glass component. The silica powder can be amorphous or crystalline.</description><language>eng ; fre ; ger</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CEMENTS ; CERAMICS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; LIME, MAGNESIA ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES ; METALLURGY ; MINERAL OR SLAG WOOL ; PRINTED CIRCUITS ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TREATMENT OF NATURAL STONE</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190508&DB=EPODOC&CC=EP&NR=3480179A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190508&DB=EPODOC&CC=EP&NR=3480179A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Brown, Orville W</creatorcontrib><creatorcontrib>Marley, Peter</creatorcontrib><creatorcontrib>Sridharan, Srinivasan</creatorcontrib><creatorcontrib>Widlewski, David L</creatorcontrib><creatorcontrib>Maloney, John J</creatorcontrib><creatorcontrib>Megherhi, Mohammed H</creatorcontrib><creatorcontrib>Gleason, Cody J</creatorcontrib><creatorcontrib>Davis, Jackie D</creatorcontrib><creatorcontrib>Wang, Stanley</creatorcontrib><creatorcontrib>Coffey, Thomas Joseph</creatorcontrib><creatorcontrib>Tormey, Ellen S</creatorcontrib><creatorcontrib>Her, Yie-Shein</creatorcontrib><creatorcontrib>Sakoske, George E</creatorcontrib><title>LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS</title><description>A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950°C or below 1100°C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt% or 10-99 wt% silica powder and 5-90 wt% or 1-90 wt% glass component. The glass component includes 50-90 mole% SiO 2 , 5-35 mole% or 0.1-35 mole% B 2 O 3 , 0.1-10 mole% or 0.1-25 mole% Al 2 O 3 , 0.1-10 mole% K 2 O, 0.1-10 mole% Na 2 O, 0.1-20 mole% Li 2 O, 0.1-30 mole% F. The total amount of Li 2 O + Na 2 O + K 2 O is 0.1-30 mole% of the glass component. The silica powder can be amorphous or crystalline.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>LIME, MAGNESIA</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>PRINTED CIRCUITS</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD18Q9X8FZw8XT1cXUOCfJ0VnD29w3wD_YM8fT3C1Zw8w9S8PB091BwC3INDHX1c45UcAwI8PF0dgTL8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAYxMLA0NzS0dDYyKUAADtaSmo</recordid><startdate>20190508</startdate><enddate>20190508</enddate><creator>Brown, Orville W</creator><creator>Marley, Peter</creator><creator>Sridharan, Srinivasan</creator><creator>Widlewski, David L</creator><creator>Maloney, John J</creator><creator>Megherhi, Mohammed H</creator><creator>Gleason, Cody J</creator><creator>Davis, Jackie D</creator><creator>Wang, Stanley</creator><creator>Coffey, Thomas Joseph</creator><creator>Tormey, Ellen S</creator><creator>Her, Yie-Shein</creator><creator>Sakoske, George E</creator><scope>EVB</scope></search><sort><creationdate>20190508</creationdate><title>LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS</title><author>Brown, Orville W ; Marley, Peter ; Sridharan, Srinivasan ; Widlewski, David L ; Maloney, John J ; Megherhi, Mohammed H ; Gleason, Cody J ; Davis, Jackie D ; Wang, Stanley ; Coffey, Thomas Joseph ; Tormey, Ellen S ; Her, Yie-Shein ; Sakoske, George E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3480179A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>LIME, MAGNESIA</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>PRINTED CIRCUITS</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>Brown, Orville W</creatorcontrib><creatorcontrib>Marley, Peter</creatorcontrib><creatorcontrib>Sridharan, Srinivasan</creatorcontrib><creatorcontrib>Widlewski, David L</creatorcontrib><creatorcontrib>Maloney, John J</creatorcontrib><creatorcontrib>Megherhi, Mohammed H</creatorcontrib><creatorcontrib>Gleason, Cody J</creatorcontrib><creatorcontrib>Davis, Jackie D</creatorcontrib><creatorcontrib>Wang, Stanley</creatorcontrib><creatorcontrib>Coffey, Thomas Joseph</creatorcontrib><creatorcontrib>Tormey, Ellen S</creatorcontrib><creatorcontrib>Her, Yie-Shein</creatorcontrib><creatorcontrib>Sakoske, George E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brown, Orville W</au><au>Marley, Peter</au><au>Sridharan, Srinivasan</au><au>Widlewski, David L</au><au>Maloney, John J</au><au>Megherhi, Mohammed H</au><au>Gleason, Cody J</au><au>Davis, Jackie D</au><au>Wang, Stanley</au><au>Coffey, Thomas Joseph</au><au>Tormey, Ellen S</au><au>Her, Yie-Shein</au><au>Sakoske, George E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS</title><date>2019-05-08</date><risdate>2019</risdate><abstract>A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950°C or below 1100°C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt% or 10-99 wt% silica powder and 5-90 wt% or 1-90 wt% glass component. The glass component includes 50-90 mole% SiO 2 , 5-35 mole% or 0.1-35 mole% B 2 O 3 , 0.1-10 mole% or 0.1-25 mole% Al 2 O 3 , 0.1-10 mole% K 2 O, 0.1-10 mole% Na 2 O, 0.1-20 mole% Li 2 O, 0.1-30 mole% F. The total amount of Li 2 O + Na 2 O + K 2 O is 0.1-30 mole% of the glass component. The silica powder can be amorphous or crystalline.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL PRINTED CIRCUITS REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TREATMENT OF NATURAL STONE |
| title | LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS |
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