LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS
A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950°C or below 1100°C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-3...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950°C or below 1100°C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt% or 10-99 wt% silica powder and 5-90 wt% or 1-90 wt% glass component. The glass component includes 50-90 mole% SiO 2 , 5-35 mole% or 0.1-35 mole% B 2 O 3 , 0.1-10 mole% or 0.1-25 mole% Al 2 O 3 , 0.1-10 mole% K 2 O, 0.1-10 mole% Na 2 O, 0.1-20 mole% Li 2 O, 0.1-30 mole% F. The total amount of Li 2 O + Na 2 O + K 2 O is 0.1-30 mole% of the glass component. The silica powder can be amorphous or crystalline. |
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