CONTAINER FOR CHEMICAL PRECURSORS IN A DEPOSITION PROCESS

Described herein are systems and methods using same for the storage and delivery of chemical precursors that are used in the manufacture of a semiconductor device. In one aspect, the storage system comprises the chemical precursors and a container and the systems have an inlet jet design. The chemic...

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Bibliographische Detailangaben
Hauptverfasser:	NEHLSEN, James Patrick, BIRTCHER, Charles Michael
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Described herein are systems and methods using same for the storage and delivery of chemical precursors that are used in the manufacture of a semiconductor device. In one aspect, the storage system comprises the chemical precursors and a container and the systems have an inlet jet design. The chemical precursor has a low vapor pressure less than about 50 Torr-absolute (6.7 kPa) at container temperature set for delivery. The delivery system further contains a carrier gas. The inlet jet design can deliver the carrier gas at a certain pressure and a certain low rate to impinge upon the surface of the chemical precursors to produce a vapor or droplets of the chemical precursor. The vapor or droplets of the chemical precursor then combine with the carrier gas to provide a precursor-laden fluid stream which will be passed to and used in the processing tool.