EUV COLLECTOR

An EUV collector for use in an EUV projection exposure apparatus includes at least one mirror surface having surface structures for scattering a used EUV wavelength (λ) of used EUV light. The mirror surface has a surface height with a spatial wavelength distribution between a lower limit spatial wav...

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Bibliographische Detailangaben
Hauptverfasser:	MERKEL, Wolfgang, METALIDIS, Georgo, SCHUSTER, Ingrid, KIEREY, Holger
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	An EUV collector for use in an EUV projection exposure apparatus includes at least one mirror surface having surface structures for scattering a used EUV wavelength (λ) of used EUV light. The mirror surface has a surface height with a spatial wavelength distribution between a lower limit spatial wavelength and an upper limit spatial wavelength. An effective roughness (rmsG) below the lower limit spatial wavelength (PG) satisfies the following relation: (4π rmsG cos(θ)/λ)2