GALLIUM NITRIDE-BASED SENSOR HAVING HEATER STRUCTURE AND METHOD OF MANUFACTURING THE SAME

A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an Al x Ga 1-x N layer, an In x Al 1-x N layer and an In x Al y Ga 1-x-y N layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the Al x Ga 1-x N layer, the In x Al 1-x N layer and the In x Al y Ga 1-x-y N layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.