PROCESS, REACTOR AND SYSTEM FOR FABRICATION OF FREESTANDING TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY
The present invention relates to a process, reactor and system to produce self-standing two-dimensional nanostructures, using a microwave-excited plasma environment. The process is based on injecting, into a reactor, a mixture (9) of gases and precursors in stream regime. The stream is subjected to...
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creator | SOARES GONÇALVES, Bruno Miguel DA MOTA CAPITÃO LEMOS ALVES, Luís Paulo DOS SANTOS DUARTE VIEIRA HENRIQUES, Júlio Paulo STEFANOVA TATAROVA, Elena |
description | The present invention relates to a process, reactor and system to produce self-standing two-dimensional nanostructures, using a microwave-excited plasma environment. The process is based on injecting, into a reactor, a mixture (9) of gases and precursors in stream regime. The stream is subjected to a surface wave (5) electric field, excited by the use of microwave power (7) which is introduced into a field applicator (6), generating high energy density plasmas (2,3,4), that break the precursors into its atomic and/or molecular constituents. The system comprises a plasma reactor with a surface wave launching zone, a transient zone with a progressively increasing cross-sectional area, and a nucleation zone. The plasma reactor together with an infrared radiation source (11) provides a controlled adjustment of the spatial gradients, of the temperature and the gas stream velocity. The majority of the obtained two-dimensional nanostructures samples have a thickness of a single atomic layer, in addition the process and system allow to obtain graphene production rates of the order of one gram per hour and higher. |
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The process is based on injecting, into a reactor, a mixture (9) of gases and precursors in stream regime. The stream is subjected to a surface wave (5) electric field, excited by the use of microwave power (7) which is introduced into a field applicator (6), generating high energy density plasmas (2,3,4), that break the precursors into its atomic and/or molecular constituents. The system comprises a plasma reactor with a surface wave launching zone, a transient zone with a progressively increasing cross-sectional area, and a nucleation zone. The plasma reactor together with an infrared radiation source (11) provides a controlled adjustment of the spatial gradients, of the temperature and the gas stream velocity. The majority of the obtained two-dimensional nanostructures samples have a thickness of a single atomic layer, in addition the process and system allow to obtain graphene production rates of the order of one gram per hour and higher.</description><language>eng ; fre ; ger</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; NANOTECHNOLOGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190320&DB=EPODOC&CC=EP&NR=3455389A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190320&DB=EPODOC&CC=EP&NR=3455389A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SOARES GONÇALVES, Bruno Miguel</creatorcontrib><creatorcontrib>DA MOTA CAPITÃO LEMOS ALVES, Luís Paulo</creatorcontrib><creatorcontrib>DOS SANTOS DUARTE VIEIRA HENRIQUES, Júlio Paulo</creatorcontrib><creatorcontrib>STEFANOVA TATAROVA, Elena</creatorcontrib><title>PROCESS, REACTOR AND SYSTEM FOR FABRICATION OF FREESTANDING TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY</title><description>The present invention relates to a process, reactor and system to produce self-standing two-dimensional nanostructures, using a microwave-excited plasma environment. The process is based on injecting, into a reactor, a mixture (9) of gases and precursors in stream regime. The stream is subjected to a surface wave (5) electric field, excited by the use of microwave power (7) which is introduced into a field applicator (6), generating high energy density plasmas (2,3,4), that break the precursors into its atomic and/or molecular constituents. The system comprises a plasma reactor with a surface wave launching zone, a transient zone with a progressively increasing cross-sectional area, and a nucleation zone. The plasma reactor together with an infrared radiation source (11) provides a controlled adjustment of the spatial gradients, of the temperature and the gas stream velocity. The majority of the obtained two-dimensional nanostructures samples have a thickness of a single atomic layer, in addition the process and system allow to obtain graphene production rates of the order of one gram per hour and higher.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>NANOTECHNOLOGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNysEKgkAQxnEvHaJ6h3mAvGRBHad1Vhd0R3ZGwpNIbKcoyd6fDHqATh9_vt8yeTWBDYlsIRAa5QDoc5BOlGqwc1o8B2dQHXtgCzYQic7G-QL0wmnuavIyv1iBR8-ioTXaBhJo5YuaCqVGUDKl54qLbp0sbsN9ipvfrhKwpKZM4_js4zQO1_iI756abH84ZMcT7rI_yAcYijii</recordid><startdate>20190320</startdate><enddate>20190320</enddate><creator>SOARES GONÇALVES, Bruno Miguel</creator><creator>DA MOTA CAPITÃO LEMOS ALVES, Luís Paulo</creator><creator>DOS SANTOS DUARTE VIEIRA HENRIQUES, Júlio Paulo</creator><creator>STEFANOVA TATAROVA, Elena</creator><scope>EVB</scope></search><sort><creationdate>20190320</creationdate><title>PROCESS, REACTOR AND SYSTEM FOR FABRICATION OF FREESTANDING TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY</title><author>SOARES GONÇALVES, Bruno Miguel ; DA MOTA CAPITÃO LEMOS ALVES, Luís Paulo ; DOS SANTOS DUARTE VIEIRA HENRIQUES, Júlio Paulo ; STEFANOVA TATAROVA, Elena</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3455389A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>NANOTECHNOLOGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SOARES GONÇALVES, Bruno Miguel</creatorcontrib><creatorcontrib>DA MOTA CAPITÃO LEMOS ALVES, Luís Paulo</creatorcontrib><creatorcontrib>DOS SANTOS DUARTE VIEIRA HENRIQUES, Júlio Paulo</creatorcontrib><creatorcontrib>STEFANOVA TATAROVA, Elena</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SOARES GONÇALVES, Bruno Miguel</au><au>DA MOTA CAPITÃO LEMOS ALVES, Luís Paulo</au><au>DOS SANTOS DUARTE VIEIRA HENRIQUES, Júlio Paulo</au><au>STEFANOVA TATAROVA, Elena</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCESS, REACTOR AND SYSTEM FOR FABRICATION OF FREESTANDING TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY</title><date>2019-03-20</date><risdate>2019</risdate><abstract>The present invention relates to a process, reactor and system to produce self-standing two-dimensional nanostructures, using a microwave-excited plasma environment. The process is based on injecting, into a reactor, a mixture (9) of gases and precursors in stream regime. The stream is subjected to a surface wave (5) electric field, excited by the use of microwave power (7) which is introduced into a field applicator (6), generating high energy density plasmas (2,3,4), that break the precursors into its atomic and/or molecular constituents. The system comprises a plasma reactor with a surface wave launching zone, a transient zone with a progressively increasing cross-sectional area, and a nucleation zone. The plasma reactor together with an infrared radiation source (11) provides a controlled adjustment of the spatial gradients, of the temperature and the gas stream velocity. The majority of the obtained two-dimensional nanostructures samples have a thickness of a single atomic layer, in addition the process and system allow to obtain graphene production rates of the order of one gram per hour and higher.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
title | PROCESS, REACTOR AND SYSTEM FOR FABRICATION OF FREESTANDING TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY |
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